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Method for preparing silicon nitride bonded silicon carbide composite material by microwave sintering
Apr 11, 2018

The invention relates to a method for preparing a silicon nitride bonded silicon carbide composite material by microwave sintering. The technical scheme is: first 50~80wt% silicon carbide particles, 5~25wt% silicon carbide powder, 5~30wt% elemental silicon powder, 1~4wt% carboxymethyl cellulose and 1~5wt% Water mixing, forming; The molded green body is placed in a vacuum microwave sintering furnace, the vacuum is evacuated to the pressure in the microwave sintering furnace ≤ 20Pa, then filled with nitrogen, and then in nitrogen atmosphere and 1300~1600°C conditions Sintering for 0.5 to 5 hours results in silicon nitride bonded silicon carbide composites. The invention has the advantages of short production cycle and high production efficiency. The prepared silicon nitride bonded silicon carbide composite material has uniform phase distribution, not only has high strength, but also has good thermal shock resistance, oxidation resistance, high temperature and creep resistance. Denaturation and erosion resistance.